CV












Jamie Phillips
Arthur F. Thurnau
Professor
EECS Department
University of Michigan
2305 EECS
1301 Beal Avenue
Ann Arbor, MI 48109
T 734–764–4157
B jphilli@umich.edu
Education
1998 Ph.D. in Electrical Engineering, University of Michigan, Ann Arbor, MI.
Thesis: Self-Assembled In(Al,Ga)As/Ga(Al)As Quantum Dots for Intersubband Detectors
1996 M.S. in Electrical Engineering, University of Michigan, Ann Arbor, MI.
1994 B.S. in Electrical Engineering, University of Michigan, Ann Arbor, MI.
Professional Experience
2014-present Arthur F. Thurnau Professor, Dept. of Electrical Engineering and Computer
Science, University of Michigan, Ann Arbor, MI.
2013-present Associate Chair of Undergraduate Affairs, Electrical and Computer Engineer-
ing Division, University of Michigan, Ann Arbor, MI.
2013-2014 Professor, Dept. of Electrical Engineering and Computer Science, University of
Michigan, Ann Arbor, MI.
2008-2013 Associate Professor, Dept. of Electrical Engineering and Computer Science,
University of Michigan, Ann Arbor, MI.
2002-2008 Assistant Professor, Dept. of Electrical Engineering and Computer Science,
University of Michigan, Ann Arbor, MI.
1999-2001 Research Scientist, Rockwell Science Center, Thousand Oaks, CA.
1998-1999 Postdoctoral Researcher, Sandia National Laboratories, Albuquerque, NM.
Honors and Awards
2017 IEEE Transactions on Education Theodore E. Batchman Best Paper Award,
IEEE Education Society.
2014 Arthur F. Thurnau Professorship, University of Michigan.
2011 University Undergraduate Teaching Award, University of Michigan.
2007 Young Faculty Award, DARPA/MTO.
2007 Outstanding Achievement Award, EECS Department.
2003 CAREER Award, National Science Foundation.
1999 Paul Rappaport Award, IEEE Electron Devices Society.
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1997 Best Student Paper, North American Conference on Molecular Beam Epitaxy.
Professional Service
2018-2019 Electronic Materials Conference, Past Chair.
2016-2017 Electronic Materials Conference, General Chair.
2014-2015 Electronic Materials Conference, ProgramChair.
2011-present Journal of Electronic Materials, Associate Editor.
2014 International Workshop on ZnO and Related Materials, Program Chair.
2011-2013 Electronic Materials Conference, Secretary.
2011-2013 Device Research Conference, Program Committee.
2010-2012 AVS Michigan Chapter, Executive Committee.
2011 MRS Fall Meeting, Co-Organizer.
2006-2011 Electronic Materials Conference, Program Committee.
2005-2010 J. Electronic Materials, Assoc. Editor, Special Issue III-Nitrides, SiC, and ZnO.
2008 International Workshop on ZnO and Related Materials, Program Committee.
2007-2008 American Vacuum Society EMPD, Executive Committee.
University Service
2013-present ECE Division, Associate Chair of Undergraduate Affairs.
2016-present ECE Undergraduate Curriculum Innovation Committee, Chair.
2011-present ECE Undergraduate Academics Committee, Chair.
2013-2016 ECE Undergraduate Recruiting and Activities Committee, Chair.
2015-present ECE ABET Coordinator.
2013-2017 College of Engineering Curriculum Committee, Member.
2011-2017 Lurie Nanofabrication Facility Council, Member.
2011-2013 ECE Executive Committee, Member.
2008-2011 EECS Alumni Society, President.
2006-2011 ECE Graduate Committee, Member.
2003-2011 College of Engineering Manufacturing Council, Member.
2002-2007 EECS Undergraduate Office, Academic Advisor.
2002-2007 Michigan Nanofabrication Facility Operations Committee, Member.
Professional Membership
{ Institute for Electrical and Electronics Engineers (IEEE) Senior Member
{ Materials Research Society
{ American Society for Engineering Education
{ Eta Kappa Nu (Electrical and computer engineering honor society of the IEEE)
{ Phi Kappa Phi (Collegiate honor society)
{ Tau Beta Pi, Eminent Engineer (Engineering honor society)
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Laboratory Expertise
{ III-V, II-VI, and oxide material deposition by MBE, MOCVD, PLD
{ Materials characterization by XRD, SEM, TEM, AFM, Hall effect, C-V, DLTS, P-E,
photoconductive decay, photoluminescence, ellipsometry, reflectance, FTIR, UV-Vis
{ Device fabrication processes: photolithography, wet chemistry, CVD, RIE, contacts
{ Electrical, optical, and electro-optic device characterization
{ Device/circuit modeling using Sentaurus Device, Medici, SPICE, Matlab
Summary of Research Contributions and Activities
My research efforts are in the synthesis, characterization, and device applications of electronic and op-
toelectronic materials. The exploration of new materials or engineering of material heterostructures at
the nanoscale will provide new levels of performance or new device functionalities in areas of informa-
tion processing, sensing, and energy conversion. My research efforts have applied to infrared detectors,
photovoltaic cells, laser diodes, thin film transistors, and multifunctional devices.
Infrared Detectors: Infrared focal plane arrays (IR FPAs) are of high importance for a variety of
defense, scientific, and commercial applications. We were among the first to demonstrate the quan-
tum dot infrared photodetector (QDIP), and develop a detailed understanding of underlying physical
mechanisms. This work served as a foundation for bandgap-engineered III-V heterostructure infrared
detection devices and quantum dot photovoltaics. We have also been active in advancing HgCdTe IR
detector technology, including advanced models for HgCdTe optical absorption properties, demonstrat-
ing Auger suppression in HgCdTe photodiodes to increase operating temperature,and barrier-integrated
approaches such as the demonstration of the first nBn HgCdTe photodetector.
Intermediate-band solar cells: Solar cells based on multi-photon transitions offer the potential of
overcoming the Shockley-Quiesser limit for homogeneous materials, while maintaining a single-junction
device. We have developed detailed models for intermediate band solar cells to provide characteristics
of devices with realistic material and device parameters, and have demonstrated the first ZnTe:O in-
termediate level solar cells. We are currently studying the underlying physical mechanisms governing
intermediate band solar energy conversion, and methods of enhancing conversion efficiency through
design of materials.
Photovoltaic Energy Harvesting for mm-Scale Systems: Low-power computing systems can en-
able pervasive sensor networks and the ‘internet of things’. Efficient energy-harvesting technologies are
needed as a reliable energy source. Photovoltaics provide a means of harvesting energy from ambient
lighting, or even infrared radiation for through-tissue implantable devices for medical applications. We
are currently studying the application of photovoltaics to these systems and the optimization of material
and device architectures to maximize energy harvesting.
Infrared Spectral Filters: Narrow band spectral filtering is needed for a wide range of optical appli-
cations, where the achievement of such filters at the microscale could radically transform applications
in spectroscopy and imaging. Dielectric gratings with high refractive index contrast, with dimensions
near the optical wavelength, can provide unique optical behavior through photonic bandstructure en-
gineering, where broadband reflection, focusing, and narrowband reflection can be achieved. We are
investigating dielectric grating filters in the IR spectral region, and application to hyperspectral imaging.
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ZnO and related materials: ZnO and related wide bandgap oxide semiconductors show tremendous
potential for transparent electronics, optoelectronics operating in the UV and visible region, and for mul-
tifunctional devices integrating semiconducting and other oxide heterojunctions. We have demonstrated
the epitaxial growth of single-crystal ZnO with quality similar to bulk ZnO, ZnO/MgZnO quantum wells
with excellent optical properties, and ferroelectric/ZnO heterojunctions demonstrating charge control
through polarization switching. We have demonstrated high-performance ZnO thin film transistors,
including a complementary digital circuit technology based on ZnO and ZnTe TFTs.
Courses Taught
Fall 2018 EECS 215, Introduction to Circuits.
Fall 2017 EECS 421, Properties of Transistors.
Winter 2017 EECS 215, Introduction to Circuits.
Fall 2015 ENGR 100, Solar Cells and Self-Powered Wireless Systems.
Winter 2015 EECS 320, Introduction to Semiconductor Devices.
Winter 2014 ENGR 100, Solar Cells: Renewable Energy From the Sun.
Winter 2013 EECS 598, Solar Cell Device Physics.
Fall 2012 ENGR 100, Solar Cells: Renewable Energy From the Sun.
Winter 2012 EECS 320, Introduction to Semiconductor Devices.
Fall 2011 ENGR 100, Photovoltaics and Solar Powered Systems.
Winter 2011 EECS 598, Solar Cell Device Physics.
Fall 2010 ENGR 100, Photovoltaics and Solar Powered Systems.
Winter 2010 ENGR 100, Photovoltaics and Solar Powered Systems.
Fall 2009 EECS 215, Introduction to Circuits.
Winter 2009 EECS 320, Introduction to Semiconductor Devices.
Winter 2008 EECS 215, Introduction to Circuits.
Fall 2007 EECS 215, Introduction to Circuits.
Winter 2007 EECS 320, Introduction to Semiconductor Devices.
Fall 2006 EECS 421, Properties of Transistors.
Winter 2006 EECS 320, Introduction to Semiconductor Devices.
Fall 2005 EECS 215, Introduction to Circuits.
Winter 2005 EECS 429, Semiconductor Optoelectronic Devices.
Fall 2004 EECS 320, Introduction to Semiconductor Devices.
Winter 2004 EECS 215, Introduction to Circuits.
Fall 2003 EECS 529, Semiconductor Lasers and LEDs.
Winter 2003 EECS 320, Introduction to Semiconductor Devices.
Fall 2002 EECS 421, Properties of Transistors.
Winter 2002 EECS 320, Introduction to Semiconductor Devices.
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Doctoral Graduates
2015 Alan Teran, Spectrum-Dependent Photovoltaic Energy Harvesting.
2014 Chihyu Chen, ZnTeO and Oxygen Doped II-VI Ternary Alloys for Intermediate Band
Solar Cells.
2014 Justin Foley, Subwavelength Dielectric Grating-based Broadband Reflectors and Nar-
rowband Transmission Filters.
2013 Jinyoung Hwang, Engineered type-II heterostructure for high efficiency solar cell
application.
2012 Jeff Siddiqui, Investigation of Electrical Instabilities and Interface Change in ZnO
Thin Film Transistors.
2012 Anne Itsuno, Bandgap-Engineered HgCdTe Infrared Detector Structures for Reduced
Cooling Requirements.
2010 Willie Bowen, Thin Film Electronics Based on ZnO and ZnO/MgZnO Heterojunc-
tions.
2010 Albert Shihchun Lin, Modeling of Solar Cell Efficiency Improvement Using Optical
Gratings and Intermediate Absorption Band.
2009 Emine Çağin, Integration of Functional Oxides With the Semiconductor Zinc Oxide.
2009 Weiming Wang, Intermediate Band Solar Cells Based on ZnTe:O.
2009 Pierre Emelie, HgCdTe Auger-suppressed infrared detectors under non-equilibrium
operation.
2006 Ding-Yuan Chen, Ferroelectric thin films for microwave and photonics applications.
2006 Kaveh Moazzami, Characterization of optoelectronic properties of HgCdTe and ZnO
II-VI semiconductors for infrared and ultraviolet detector applications.
Current Graduate Students
2015-present Minhyung Ahn, SiC Materials for Electronic in Harsh Environments.
2016-present Michael Barrow, Narrowband Infrared Spectral Filters.
2014-present Justin Easley, Materials for Next Generation IR Detectors.
2016-present Hannah Masten, Gallium Oxide Materials and Devices.
2014-present Eun Seong Moon, Photovoltaic Energy Harvesting For Low-Power Wireless Sensors.
2015-present Martin Scherr, Infrared Spectral Filters Based on Subwavelength Dielectric Gratings.
Masters Students
2012-2014 Connor Field, Quantum Dots for Next Generation Solar Cells.
2010-2012 Adrian Bayraktaroglu, Ferroelectric and semiconducting oxide thin films.
2010-2012 Bor-Chau Juang, Electronic structure and optical properties of type-II quantym dots.
2002-2005 Tim Murphy, Epitaxial growth and doping of ZnO by molecular beam epitaxy.
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Undergraduate Students
2015 Cristina Guillen, Parylene Infiltration in GaAs Nanowires, NNIN REU Program.
2015 Marshall Versteeg, Femtosecond Laser-Induced Doping of SiC, UM Energy Institute
UROP Program.
2015 Nick Folz, Infrared Absorption in Glucose.
2015 Ian Raber, Indoor Photovoltaic Characterization, RISE Program.
2014-2015 Joeson Wong, Photovoltaic Energy Harvesting from Indoor Lighting.
2013 Arthur Bowman, Infrared Filtering Via Sub-Wavelength Gratings for Hyperspectral
Imaging.
2013 Jiazhen Zheng, Photoluminescence of ZnTeO.
2013 Kevin Nguy, Photoluminescence of Wide Bandgap II-VI Materials.
2012 Amy Chiang, Admittance spectroscopy of solar cell materials.
2012 Katherine Nygren, Infrared sub-wavelength gratings for infrared detectors.
2011 Connor Field, Chemical Bath Deposition of ZnS Thin Films.
2010-2011 Tanya Das, Modeling of HgCdTe infrared detectors and integrated optical elements.
2010 Scott Bakkila, Ferroelectric thin films for reconfigurable RF electronics in next gen-
eration wireless communications, NNIN REU Program.
2010 Michael Tulman, Modeling of integrated optical elements for infrared imaging .
2009 Du Nguyen, Atomic layer deposition of high-k dielectrics for thin film transistors ,
NNIN REU Program.
2008 Michael McCormick, Modeling of wire grid polarizers and Fabry-Perot cavities for
infrared detection .
2007 David Maxwell, Pulsed laser deposition of vanadium oxide thin films .
2005-2006 Pak-Yuen Chan, Pulsed laser deposition of ZnO.
2006 George Cramer, ZnO thin film transistors, NNIN REU Program.
2005 Vinay Alexander, Pulsed laser deposition of thin film ferroelectrics.
2005 Song Liang Chua, Electronic characterization of ZnO thin films .
2004-2005 William Luong, Pulsed laser deposition of ferroelectric thin films for tunable mi-
crowave capacitors.
2004 Nicole Staszkiewicz, ZnO nanowires, NNIN REU Program.
2003-2004 Jeremy Tolbert, Capacitance-voltage measurements for material characterization.
2003 Nafisa Muzzafar, Thin film Mach-Zendher interferometers.
2003-2004 Sameer Walavalkar, Epitaxial growth simulation, bandstructure calculation.
2002 DaHan Liao, Optical properties of HgCdTe.
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Publications
Books and Book Chapters
[1] W. H. Hayt, J. E. Kemmerly, J. D. Phillips, and S. M. Durbin. Engineering Circuit Analysis
(McGraw-Hill, 2019).
[2] J. Phillips, W. Bowen, E. Cagin, and W. Wang. “Electronic and Optoelectronic Devices Based
on Semiconducting Zinc Oxide”. Comprehensive Semiconductor Science and Technology,
edited by P. Bhattacharya, R. Fornari, and H. Kamimura, volume 6, 101–127 (Elsevier, 2011).
[3] J. Phillips, A. Stiff-Roberts, and P. Bhattacharya. “Quantum Dot Infrared Detectors”. Hand-
book of Semiconductor Nanostructures and Nanodevices, edited by A. A. Balandin and K. L.
Wang, volume 4, 195–215 (American Scientific Publishers, 2006).
[4] J. Phillips, A. Stiff-Roberts, and P. Bhattacharya. “Quantum Dot Infrared Photodetector”.
Encyclopedia of Nanoscience and Nanotechnology, edited by H. Nalwa, 131–141 (American
Scientific Publishers, 2004).
Patents
[1] M. DeJarld, A. Teran, J. Philllips, and J. Millunchick. “DIRECT GROWTH OF OPTOELEC-
TRONIC DEVICES ON CMOS TECHNOLOGY”. Filed (2015).
[2] J. Foley, J. D. Phillips, and S. Young. “Narrowband transmission filter”. US Patent App.
14/592,247 (2015).
[3] L. Q. Zhou, C. Ling, H. Jia, J. D. Phillips, and C. Chen. “OXYGEN DOPED CADMIUM
MAGNESIUM TELLURIDE ALLOY”. US Patent 20,150,372,180 (2015).
Journal Articles (peer-reviewed archival journals)
[1] J. Easley, E. Arkun, M. Carmody, and J. Phillips. “Variable-Field Hall Effect Analysis of
HgCdTe Epilayers with Very Low Doping Density”. Journal of Electronic Materials, 46(9),
5479–5483 (2017).
[2] E. Moon, D. Blaauw, and J. Phillips. “Infrared Energy Harvesting in Millimeter-Scale GaAs
Photovoltaics”. IEEE Transactions on Electron Devices, 64(11), 4554 4560 (2017).
[3] E. Moon, D. Blaauw, and J. D. Phillips. “Small-Area Si Photovoltaics for Low-Flux Infrared
Energy Harvesting”. IEEE Transactions on Electron Devices, 64(1), 15–20 (2017).
[4] E. Moon, D. Blaauw, and J. D. Phillips. “Subcutaneous Photovoltaic Infrared Energy Harvest-
ing for Bio-implantable Devices”. IEEE Transactions on Electron Devices, 64(5), 2432–2437
(2017).
[5] I. Ramiro, E. Antolin, H. Jinyoung, A. Teran, A. J. Martin, P. G. Linares, J. Millunchick,
J. Phillips, A. Marti, and A. Luque. “Three-bandgap absolute quantum efficiency in
GaSb/GaAs quantum dot intermediate band solar cells”. IEEE Journal of Photovoltaics,
7(2), 508–12 (2017).
[6] I. Ramiro, J. Villa, C. Tablero, E. Antolin, A. Luque, A. Marti, J. Hwang, J. Phillips, A. J.
Martin, and J. Millunchick. “Analysis of the intermediate-band absorption properties of type-II
GaSb/GaAs quantum-dot photovoltaics”. Physical Review B, 96(12), 125,422 (2017).
[7] M. Scherr, M. Barrow, and J. Phillips. “Long-wavelength infrared transmission filters via
two-step subwavelength dielectric gratings”. Optics Letters, 42(3), 518–521 (2017).
[8] M. DeJarld, A. Teran, M. Luengo-Kovac, L. Yan, E. Moon, S. Beck, C. Guillen, V. Sih,
J. Phillips, and J. Mirecki Millunchick. “The effect of doping on low temperature growth
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of high quality GaAs nanowires on polycrystalline films”. Nanotechnology, 27(49), 495,605
(2016).
[9] J. Foley, S. Daly, C. Lenaway, and J. Phillips. “Investigating Student Motivation and Per-
formance in Electrical Engineering and its Subdisciplines”. IEEE Trans. Education, 59(4),
241–247 (2016).
[10] I. Ramiro, E. Antolín, J. Hwang, A. Teran, A. J. Martin, P. G. Linares, J. Millunchick,
J. Phillips, A. Martí, and A. Luque. “Three-Bandgap Absolute Quantum Efficiency in
GaSb/GaAs Quantum Dot Intermediate Band Solar Cells”. IEEE Journal of Photovoltaics,
7(2), 508–512 (2016).
[11] S. Sengupta, T. Templeman, C. Chen, E. Moon, M. Shandalov, V. Ezersky, J. Phillips, and
Y. Golan. “Chemical epitaxy and interfacial reactivity in solution deposited PbS on ZnTe”.
Journal of Materials Chemistry C, 4(10), 1996–2002 (2016).
[12] A. S. Teran, E. Moon, W. Lim, G. Kim, I. Lee, D. Blaauw, and J. D. Phillips. “Energy Harvest-
ing for GaAs Photovoltaics Under Low-Flux Indoor Lighting Conditions”. IEEE Transactions
on Electron Devices, 63(7), 2820–2825 (2016).
[13] J. Foley and J. Phillips. “Normal incidence narrowband transmission filtering capabilities
using symmetry protected modes of a dielectric grating”. Optics Letters, 40(11), 2637–2640
(2015).
[14] A. Teran, J. Wong, W. Lim, G. Kim, Y. Lee, D. Blaauw, and J. Phillips. “AlGaAs Photo-
voltaics for Indoor Energy Harvesting in mm-Scale Wireless Sensor Nodes”. IEEE Transactions
on Electron Devices, 62(7), 2170–2175 (2015).
[15] A. S. Teran, C. Chen, E. Lopez, P. G. Linares, I. Artacho, A. Marti, A. Luque, and J. D. Phillips.
“Heterojunction Band Offset Limitations on Open-Circuit Voltage in p-ZnT-ZnSe Solar Cells”.
IEEE J. Photovoltaics, 5(3), 874–877 (2015). doi:10.1109/JPHOTOV.2015.2411057.
[16] M. J. Abere, C. Chen, D. R. Rittman, M. Kang, R. S. Goldman, J. D. Phillips, B. Torralva,
and S. M. Yalisove. “Nanodot formation induced by femtosecond laser irradiation”. Applied
Physics Letters, 105(16), 163,103 (2014).
[17] E. Antolin, C. Chen, I. Ramiro, J. Foley, E. Lopez, I. Artacho, J. Hwang, A. Teran, E. Hernan-
dez, C. Tablero, A. Marti, J. D. Phillips, and A. Luque. “Intermediate Band to Conduction
Band Optical Absorption in ZnTeO”. IEEE Journal of Photovoltaics, 4(4), 1091–1094 (2014).
[18] C. Chen, J. Zheng, K. Nguy, F. Naab, and J. Phillips. “Distinguishing Optical Behavior of
Oxygen States and Native Deep Level Emission in ZnTe”. Journal of Electronic Materials,
43(4), 879–883 (2014).
[19] J. M. Foley, S. M. Young, and J. D. Phillips. “Symmetry-protected mode coupling near normal
incidence for narrow-band transmission filtering in a dielectric grating”. Physical Review B,
89(16), 165,111 (2014).
[20] J. Hwang, K. Lee, A. Teran, S. Forrest, J. D. Phillips, A. J. Martin, and J. Millunchick.
“Multiphoton Sub-Band-Gap Photoconductivity and Critical Transition Temperature in Type-
II GaSb Quantum-Dot Intermediate-Band Solar Cells”. Physical Review Applied, 1(5), 051,003
(2014).
[21] E. Plis, S. Myers, D. Ramirez, E. P. Smith, D. Rhiger, C. Chen, J. D. Phillips, and S. Krishna.
“Dual color longwave InAs/GaSb type-II strained layer superlattice detectors”. Infrared Phys.
Techn., (0) (2014). doi:http://dx.doi.org/10.1016/j.infrared.2014.09.027.
[22] S. A. Sis, S. Lee, V. Lee, A. K. Bayraktaroglu, J. D. Phillips, and A. Mortazawi. “Intrinsically
switchable, high-Q ferroelectricon-silicon composite film bulk acoustic resonators”. Ultrason-
ics, Ferroelectrics and Frequency Control, IEEE Transactions on, 61(2), 231–238 (2014).
[23] L. Zhou, C. Chen, H. Jia, C. Ling, D. Banerjee, J. Phillips, and Y. Wang. “Oxygen Incorpo-
ration in ZnTeO Alloys via Molecular Beam Epitaxy”. Journal of Electronic Materials, 43(4),
889–893 (2014). doi:10.1007/s11664-013-2960-x.
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[24] L. Zhou, C. Chen, H. Jia, C. Ling, D. Banerjee, J. Phillips, and Y. Wang. “Oxygen Incorpo-
ration in ZnTeO Alloys via Molecular Beam Epitaxy”. Journal of Electronic Materials, 43(4),
889–893 (2014).
[25] C. Chen, S. J. Kim, X. Pan, and J. D. Phillips. “Epitaxial growth of ZnTe on GaSb (100)
using in situ ZnCl2 surface clean”. J. Vac. Sci. Technol. B, 31(3), 03C118 (2013).
[26] H. Chi, C. Chen, J. D. Phillips, and C. Uher. “Transport properties of ZnTe:N thin films”.
Applied Physics Letters, 103, 042,108 (2013).
[27] J. Foley, S. Young, and J. Phillips. “Narrowband Mid-Infrared Transmission Filtering of a
Single Layer Dielectric Grating”. Applied Physics Letters, 103(8), 071,107 (2013).
[28] V. Lee, S. A. Sis, J. D. Phillips, and A. Mortazawi. “Intrinsically Switchable Ferroelectric
Contour Mode Resonators”. Microwave Theory and Techniques, IEEE Transactions on, 61(8),
2806–2813 (2013).
[29] A. Lin and J. D. Phillips. “Resolving Spectral Overlap Issue of Intermediate Band Solar
Cells using Non-uniform Subbandgap State Filling”. Progress in Photovoltaics: Research and
Applications, DOI: 10.1002/pip.2358 (2013).
[30] A. J. Martin, J. Hwang, E. Marquis, E. P. Smakman, T. W. Saucer, G. V. Rodriguez,
A. Hunter, V. Sih, P. M. Koenraad, J. D. Phillips, and J. Mirecki Millunchick. “The disinti-
gration of GaSb/GaAs nanostructures upon capping”. Applied Physics Letters, 102, 113,103
(2013).
[31] A. Chen, H. Zhou, Z. Bi, Y. Zhu, Z. Luo, A. Bayraktaroglu, J. Phillips, E.-M. Choi, J. L.
MacManus-Driscoll, S. J. Pennycook, J. Narayan, Q. Jia, X. Zhang, and H. Wang. “A New
Class of Room-Temperature Multiferroic Thin Films with Bismuth-Based Supercell Structure”.
Advanced Materials, DOI: 10.1002/adma.201203051 (2012).
[32] A. Das, J. Heo, A. Bayraktaroglu, J. Phillips, W. Guo, T. K. Ng, B. Ooi, and P. Bhattacharya.
“Room temperature strong coupling effects in a single ZnO nanowire microcavity”. Optics
Express, 20(11), 11,830–11,837 (2012).
[33] J. Foley, A. Itsuno, T. Das, S. Velicu, and J. Phillips. “Broadband Long-Wavelength Infrared
Si/SiO2 Subwavelength Grating Reflector”. Optics Letters, 111(9), 1523–1525 (2012).
[34] J. Hwang, A. J. Martin, J. M. Millunchick, and J. D. Phillips. “Thermal emission in type-
II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion”.
Journal of Applied Physics, 111(8), 074,514 (2012).
[35] A. M. Itsuno, J. D. Phillips, and S. Velicu. “Design of an Auger-suppressed unipolar HgCdTe
NBvN photodetector”. Journal of Electronic Materials, 41(10), 2886–2892 (2012).
[36] A. M. Itsuno, J. D. Phillips, and S. Velicu. “Mid-Wave Infrared HgCdTe nBn Photodetector”.
Applied Physics Letters, 100(17), 161,102 (2012).
[37] S. J. Kim, B. C. Juang, W. Wang, J. R. Jokisaari, C. Chen, J. D. Phillips, and X. Pan.
“Evolution of self-assembled Type-II ZnTe/ZnSe nanostructures: Structural and electronic
properties”. Journal of Applied Physics, 111(9), 093,524 (2012).
[38] J. Siddiqui, J. Phillips, K. Leedy, and B. Bayraktaroglu. “Illumination instabilities in
ZnO/HfO2 thin film transistors and influence of grain boundary charge”. Journal of Ma-
terials Research, 27, 2199–2204 (2012).
[39] J. J. Siddiqui, J. D. Phillips, K. Leedy, and B. Bayraktaroglu. “Bias-Temperature-Stress
Characteristics of ZnO/HfO2 Thin Film Transistors”. IEEE Transactions on Electron Devices,
59(5), 1488–1493 (2012).
[40] J. Hwang and J. Phillips. “Band Structure of Strain-Balanced GaAsBi/GaAsN Superlattices
on GaAs”. Phys. Rev. B, 83(19), 195,327 (2011).
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[41] A. Itsuno, J. D. Phillips, and S. Velicu. “Design and modeling of HgCdTe n-B-n detectors”.
Journal of Electronic Materials, 40(8), 1624–1629 (2011).
[42] A. M. Itsuno, J. D. Phillips, and S. Velicu. “Predicted performance improvement of Auger-
suppressed HgCdTe photodiodes and p-n heterojunction detectors”. IEEE Transactions on
Electron Devices, 58(2), 501–507 (2011).
[43] J. Siddiqui, J. Phillips, B. Bayraktaroglu, and K. Leedy. “Electronic properties of interface
states in HfO2/ZnO thin films”. IEEE Electron Device Letters, 32(12), 1713–1715 (2011).
[44] W. Wang, J. D. Phillips, S. J. Kim, and X. Pan. “ZnO/ZnSe/ZnTe Heterojunctions for
ZnTe-Based Solar Cells”. Journal of Electronic Materials, 40(8), 1674–1678 (2011).
[45] W. Weiming, Y. Jun, Z. Xin, and J. Phillips. “Intermediate-band solar cells based on dilute
alloys and quantum dots”. Frontiers of Optoelectronics in China, 4, 2–11 (2011).
[46] A. M. Itsuno, P. Y. Emelie, J. D. Phillips, S. Velicu, C. H. Grein, and P. Wijewarnasuriya.
“Arsenic diffusion study in HgCdTe for low p-type doping in Auger suppressed photodiodes”.
Journal of Electronic Materials, 39(7), 945–950 (2010).
[47] S. Velicu, C. H. Grein, P. Y. Emelie, A. Itsuno, J. D. Phillips, and P. Wijewarnasuriya. “MWIR
and LWIR HgCdTe Infrared Detectors Operated with Reduced Cooling Requirements”. Journal
of Electronic Materials, 39(7), 873–881 (2010).
[48] W. E. Bowen, W. Wang, and J. D. Phillips. “Complementary Thin-Film Electronics Based
on n-channel ZnO and p-channel ZnTe”. IEEE Electron Device Letters, 30(12), 1314–1316
(2009).
[49] P. Y. Emelie, J. D. Phillips, S. Velicu, and P. Wijewarnasuriya. “Parameter extraction of
HgCdTe infrared photodiodes exhibiting Auger supression”. J. Phys. D, 42, 234,003 (2009).
[50] A. Lin and J. Phillips. “Drift-Diffusion Model for Intermediate-Band Solar Cell”. IEEE
Transactions on Electron Devices, 56(12), 3168–3174 (2009).
[51] A. Lin and J. Phillips. “Model for Intermediate Band Solar Cells Incorporating Carrier Trans-
port and Recombination and Application to ZnTeO”. Journal of Applied Physics, 105, 064,512
(2009).
[52] W. Wang, W. Bowen, S. Lin, S. Spanninga, and J. Phillips. “Optical Characteristics of ZnTeO
Thin Films Synthesized by Pulsed Laser Deposition and Molecular Beam Epitaxy”. Journal
of Electronic Materials, 38(1), 119–125 (2009).
[53] W. Wang, A. Lin, and J. Phillips. “Intermediate-Band Photovoltaic Solar Cell Based on
ZnTe:O”. Applied Physics Letters, 95, 011,103 (2009).
[54] W. Wang, A. Lin, J. D. Phillips, and W. Metzger. “Generation and recombination rates at
ZnTe:O intermediate band states”. Applied Physics Letters, 95, 261,107 (2009).
[55] X. Zhu, V. Lee, J. Phillips, and A. Mortazawi. “An Intrinsically Switchable FBAR Filter Based
on Barium Titanate Thin Films”. IEEE Microwave and Wireless Component Letters, 19(6),
359–361 (2009).
[56] W. Bowen, W. Wang, E. Cagin, and J. D. Phillips. “Quantum confinement and carrier
localization effects in ZnO/MgxZn1-xO Wells”. Journal of Electronic Materials, 37(5), 749–
754 (2008).
[57] E. Cagin, J. Yang, W. Wang, J. D. Phillips, S. K. Hong, J. W. Lee, and J. Y. Lee. “Growth
and structural properties of m-plane ZnO on MgO (001) by molecular beam epitaxy”. Applied
Physics Letters, 92, 233,505 (2008).
[58] P. Y. Emelie, S. Velicu, C. H. Grein, J. D. Phillips, P. Wijewarnasuriya, and N. K. Dhar.
“Modeling of LWIR HgCdTe Auger-Suppressed Infrared Photodiodes Under Non-Equilibrium
Operation”. Journal of Electronic Materials, 37(9), 1362–1368 (2008).
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[59] A. Lin and J. Phillips. “Optimization of random diffraction gratings in thin film solar cells
using genetic algorithms”. Solar Energy Materials and Solar Cells, 92, 1689–1696 (2008).
[60] W. Wang, S. Lin, and J. Phillips. “Electrical characteristics and photoresponse of ZnO/ZnTe
heterojunction diodes”. Journal of Electronic Materials, 37(8), 1044–1048 (2008).
[61] E. Cagin, D. Chen, J. Siddiqui, and J. D. Phillips. “Hysteretic Metal-Ferroelectric-
Semiconductor Capacitors Based on PZT/ZnO Heterostructures”. J. Phys. D, 40, 2430–2434
(2007).
[62] P. Y. Emelie, J. D. Phillips, C. Fulk, J. Garland, and S. Sivananthan. “Electrical Characteristics
of PEDOT:PSS Organic Contacts to HgCdTe”. J. Electron. Mater., 36(8), 841–845 (2007).
[63] P. Y. Emelie, J. D. Phillips, S. Velicu, and C. H. Grein. “Modeling and Design Considerations
of HgCdTe Infrared Detectors Under Non-Equilibrium Operation”. J. Electron. Mater., 36(8),
846–851 (2007).
[64] J. S. Fu, X. A. Zhu, J. D. Phillips, and A. Mortazawi. “Improving Linearity of Ferroelectric-
Based Microwave Tunable Circuits”. IEEE Trans. Microwave Theory and Techniques, 55(2),
354–360 (2007).
[65] D. Chen and J. D. Phillips. “Analysis and design optimization of electrooptic interferometric
modulators for microphotonics applications”. IEEE J. Lightwave Technology, 24(6), 2340–
2346 (2006).
[66] D. Chen and J. D. Phillips. “Electric field dependence of piezoelectric coefficient in ferroelec-
tric thin films”. J. Electroceramics, 17, 613–617 (2006).
[67] P. Y. Emelie, J. D. Phillips, B. Buller, and U. D. Venkateswaran. “Free carrier absorption
and lattice vibrational modes in bulk ZnO”. Journal of Electronic Materials, 35(4), 525–529
(2006).
[68] K. Moazzami, T. E. Murphy, J. D. Phillips, M. Cheung, and A. N. Cartwright. “Sub-bandgap
photoconductivity in ZnO epilayers and extraction of trap density spectra”. Semicond. Sci.
Technol., 21, 717–723 (2006).
[69] T. E. Murphy, K. Moazzami, and J. D. Phillips. “Trap related photoconductivity in ZnO
epilayers”. Journal of Electronic Materials, 35(4), 543–549 (2006).
[70] J. Siddiqui, E. Cagin, D. Chen, and J. D. Phillips. “ZnO Thin Film Transistors with Poly-
crystalline (Ba,Sr)TiO3 Gate Insulators”. Appl. Phys. Lett., 88, 212,903 (2006).
[71] D. Chen, T. E. Murphy, and J. D. Phillips. “Properties Of Ferroelectric Pb(Zr,Ti)O3 Thin
Films On ZnO/Al2O3 (0001) Epilayers”. Thin Solid Films, 491, 301–304 (2005).
[72] D. Chen and J. D. Phillips. “Extraction of Electro-Optic Coefficient in Thin-Film Lin-
ear Electro-Optic Mach-Zehnder Interferometers with Non-Periodic Intensity-Voltage Output
Characteristics”. Optical Engineering, 44(3), 034,601 (2005).
[73] K. Moazzami, J. Phillips, D. Lee, S. Krishnamurthy, G. Benoit, Y. Fink, and T. Tiwald.
“Detailed Study Of Above Bandgap Optical Absorption In MBE HgCdTe”. J. Electron.
Mater., 34(6), 773–778 (2005).
[74] T. E. Murphy, J. O. Blaszczak, K. Moazzami, W. E. Bowen, and J. D. Phillips. “Properties
Of Electrical Contacts On Bulk And Epitaxial n-Type ZnO”. J. Electron. Mater., 34(4),
389–394 (2005).
[75] T. E. Murphy, D. Y. Chen, E. Cagin, and J. D. Phillips. “Electronic Properties Of ZnO
Epilayers Grown On C-Plane Sapphire By Plasma-Assisted Molecular Beam Epitaxy”. J. Vac.
Sci. Technol. B, 23(3), 1277–1280 (2005).
[76] T. E. Murphy, D. Y. Chen, and J. D. Phillips. “Growth And Electronic Properties Of ZnO
Epilayers By Plasma-Assisted Molecular Beam Epitaxy”. J. Electron. Mater., 34(6), 699–703
(2005).
11/24

[77] S. Chakrabarti, S. Fathpour, K. Moazzami, J. Phillips, Y. Lei, N. Browning, and P. Bhat-
tacharya. “Pulsed Laser Annealing of Self-Organized InAs/GaAs Quantum Dots”. Journal of
Electronic Materials, 33(4), L5–8 (2004).
[78] D. Chen, T. E. Murphy, S. Chakrabarti, and J. D. Phillips. “Optical Waveguiding In Ba-
TiO3/MgO/AlxOy/GaAs Heterostructures”. Applied Physics Letters, 85(22), 5206–5208
(2004).
[79] K. Moazzami, J. Phillips, D. Lee, D. Edwall, M. Carmody, E. Piquette, M. Zandian, and
J. Arias. “Optical Absorption Model for MBE HgCdTe and Application to Infrared Detector
Photo Response”. J. Electron. Mater., 33(6), 701–708 (2004).
[80] K. Moazzami, J. Phillips, D. Lee, D. Edwall, M. Carmody, E. Piquette, M. Zandian, and
J. Arias. “Optical absorption studies of HgCdTe epitaxial layers for improved infrared detector
modeling”. phys. Stat. Sol. (c), 1(4), 662–665 (2004).
[81] T. E. Murphy, D. Chen, and J. D. Phillips. “Electronic Properties Of Ferroelectric Ba-
TiO3/MgO Capacitors On GaAs”. Applied Physics Letters, 85(15), 3208–3210 (2004).
[82] T. E. Murphy, S. Walavalkar, and J. D. Phillips. “Epitaxial growth and surface modeling of
ZnO on c-plane Al2O3”. Applied Physics Letters, 85(26), 6338–6340 (2004).
[83] M. Carmody, D. Lee, M. Zandian, J. Phillips, and J. Arias. “Threading and Misfit-Dislocation
Motion in Molecular-Beam-Epitaxy-Grown HgCdTe Epilayers”. J. Electron. Mater., 32(7),
710–716 (2003).
[84] B. Kochman, A. D. Stiff-Roberts, S. Chakrabarti, J. D. Phillips, S. Krishna, J. Singh, and
P. Bhattacharya. “Absorption, Carrier Lifetime, and Gain in InAs-GaAs Quantum-Dot Infrared
Photodetectors”. IEEE Journal of Quantum Electronics, 39(3), 459–467 (2003).
[85] K. Moazzami, D. Liao, J. D. Phillips, D. L. Lee, M. Carmody, M. Zandian, and D. Edwall.
“Optical Absorption Properties of HgCdTe Epilayers with Uniform Composition”. J. Electron.
Mater., 32(7), 646–650 (2003).
[86] J. D. Phillips, K. Moazzami, J. Kim, D. D. Edwall, D. L. Lee, and J. M. Arias. “Uniformity
of optical absorption in HgCdTe epilayer measured by infrared spectromicroscopy”. Applied
Physics Letters, 83(18), 3701–3703 (2003).
[87] K. Kim, J. Urayama, T. Norris, J. Singh, J. Phillips, and P. Bhattacharya. “Gain dynamics
and ultrafast spectral hole burning in In(Ga)As self-organized quantum dots”. Applied Physics
Letters, 81, 670–2 (2002).
[88] S. Krishna, A. D. Stiff-Roberts, J. D. Phillips, P. Bhattacharya, and S. W. Kennerly. “Features
- Hot Dot Detectors - Infrared quantum dot intersubband photodetectors are a promising
technology for multiwavelength IR detection”. IEEE circuits and devices, 18(1), 14 (11
pages) (2002).
[89] J. Phillips. “Evaluation of the fundamental properties of quantum dot infrared detectors”.
Journal of Applied Physics, 91(7), 4590–4594 (2002).
[90] J. Phillips, D. Edwall, and D. Lee. “Control Of Very-Long-Wavelength Infrared HgCdTe
Detector Cutoff Wavelength”. Journal of Electronic Materials, 31(7), 664–668 (2002).
[91] B. Shin, B. Lita, R. S. Goldman, J. Phillips, and P. Bhattacharya. “Lateral indium-indium pair
correlations within the wetting layers of buried InAs/GaAs quantum dots”. Applied Physics
Letters, 81, 1423–25 (2002).
[92] P. Wijewarnasuriya, M. Zandian, J. Phillips, D. Edwall, R. Dewames, G. Hildebrandt, J. Bajaj,
J. Arias, A. D’Souza, and F. Moore. “Advances in Large-Area Hg1-xCdxTe Photovoltaic
Detectors for Remote-Sensing Applications”. Journal of Electronic Materials, 31(7), 726–31
(2002).
12/24

[93] P. Bhattacharya, S. Krishna, J. Phillips, P. J. McCann, and K. Namjou. “Carrier-dynamics in
self-organized quantum dots and their application to long-wavelength sources and detectors”.
Journal of Crystal Growth, 227(228), 27–35 (2001).
[94] D. Edwall, J. Phillips, D. Lee, and J. Arias. “Composition control of long wavelength MBE
HgCdTe using in-situ spectroscopic ellipsometry”. Journal of Electronic Materials, 30(6),
643–6 (2001).
[95] J. Phillips, D. Edwall, D. Lee, and J. Arias. “Growth of HgCdTe for long-wavelength infrared
detectors using automated control from spectroscopic ellipsometry measurements”. J. Vac.
Sci. Technol. B, 19(4), 1580–4 (2001).
[96] R. M. Biefeld and J. D. Phillips. “Growth of InSb on GaAs using InAlSb buffer layers”. Journal
of Crystal Growth, 209(4), 567–71 (2000).
[97] R. M. Biefeld, J. D. Phillips, and S. R. Kurtz. “Exploring new active regions for type I InAsSb
strained-layer lasers”. Journal of Electronic Materials, 29(1), 91–3 (2000).
[98] R. M. Biefeld, J. D. Phillips, and S. R. Kurtz. “InAsSb/InPSb strained-layer superlattice
growth using metal-organic chemical vapor deposition”. Journal of Crystal Growth, 211(1-4),
400–4 (2000).
[99] B. Lita, R. S. Goldman, J. D. Phillips, and P. K. Bhattacharya. “Interdiffusion, segregation,
and dissolution in InAs/GaAs quantum dot superlattices”. Surface Review and Letters, 7(5-6),
539–45 (2000).
[100] P. Bhattacharya, K. Kamath, J. Phillips, and D. Klotzkin. “Self-organized growth of
In(Ga)As/GaAs quantum dots and their opto-electronic device applications”. Bulletin of
Materials Science, 22(3), 519–29 (1999).
[101] P. Bhattacharya, K. K. Kamath, J. Singh, D. Klotzkin, J. Phillips, H. T. Jiang, N. Chervela,
T. B. Norris, T. Sosnowski, J. Laskar, and M. R. Murty. “In(Ga)As/GaAs self-organized
quantum dot lasers: DC and small-signal modulation properties”. IEEE Transactions on
Electron Devices, 46(5), 871–83 (1999).
[102] D. Klotzkin, J. Phillips, H. Jiang, J. Singh, and P. Bhattacharya. “Electron intersubband en-
ergy level spacing in self-organized In0.4Ga0.6As/GaAs quantum dot lasers from temperature-
dependent modulation measurements”. J. Vac. Sci. Technol. B, 17(3), 1276–80 (1999).
[103] K. K. Linder, J. Phillips, O. Qasaimeh, P. Bhattacharya, and J. C. Jiang. “In(Ga)As/GaAs
self-organized quantum dot light emitters grown on silicon substrates”. Journal of Crystal
Growth, 201(202), 1186–9 (1999).
[104] K. K. Linder, J. Phillips, O. Qasaimeh, X. F. Liu, S. Krishna, and P. Bhattacharya. “Growth
and electroluminescent properties of self-organized In0.4Ga0.6As/GaAs quantum dots grown
on silicon”. J. Vac. Sci. Technol. B, 17(3), 1116–19 (1999).
[105] K. K. Linder, J. Phillips, O. Qasaimeh, X. F. Liu, S. Krishna, P. Bhattacharya, and J. C.
Jiang. “Self-organized In0.4Ga0.6As quantum-dot lasers grown on Si substrates”. Applied
Physics Letters, 74(10), 1355–7 (1999).
[106] B. Lita, R. S. Goldman, J. D. Phillips, and P. K. Bhattacharya. “Interdiffusion and surface
segregation in stacked self-assembled InAs/GaAs quantum dots”. Applied Physics Letters,
75(18), 2797–9 (1999).
[107] B. Lita, R. S. Goldman, J. D. Phillips, and P. K. Bhattacharya. “Nanometer-scale studies
of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots”.
Applied Physics Letters, 74(19), 2824–6 (1999).
[108] J. Phillips, P. Bhattacharya, S. W. Kennerly, D. W. Beekman, and M. Dutta. “Self-assembled
InAs-GaAs quantum-dot intersubband detectors”. IEEE Journal of Quantum Electronics,
35(6), 936–43 (1999).
13/24

[109] J. Phillips, P. Bhattacharya, and U. Venkateswaran. “Pressure-induced energy level cross-
ings and narrowing of photoluminescence linewidth in self-assembled InAlAs/AlGaAs quantum
dots”. Applied Physics Letters, 74(11), 1549–51 (1999).
[110] J. Phillips, K. Kamath, P. Bhattacharya, and U. Venkateswaran. “Temperature-dependent
photoluminescence of In 0.5Al0.5As/Al0.25Ga0.75As self-organized quantum dots”. Journal
of Applied Physics, 85(5), 2997–9 (1999).
[111] J. D. Phillips, P. K. Bhattacharya, and U. D. Venkateswaran. “Photoluminescence studies
on self-organized InAlAs/AlGaAs quantum dots under pressure”. Physica Status Solidi B,
211(1), 85–9 (1999).
[112] O. Qasaimeh, W. D. Zhou, J. Phillips, S. Krishna, P. Bhattacharya, and M. Dutta. “Bistability
and self-pulsation in quantum-dot lasers with intracavity quantum-dot saturable absorbers”.
Applied Physics Letters, 74(12), 1654–6 (1999).
[113] Z. Weidong, O. Qasaimeh, J. Phillips, S. Krishna, and P. Bhattacharya. “Bias-controlled wave-
length switching in coupled-cavity In0.4Ga0.6As/GaAs self-organized quantum dot lasers”.
Applied Physics Letters, 74(6), 783–5 (1999).
[114] J. Phillips, K. Kamath, and P. Bhattacharya. “Far-infrared photoconductivity in self-organized
InAs quantum dots”. Applied Physics Letters, 72(16), 2020–2 (1998).
[115] J. Phillips, K. Kamath, T. Brock, and P. Bhattacharya. “Characteristics of InAs/AlGaAs self-
organized quantum dot modulation doped field effect transistors”. Applied Physics Letters,
72(26), 3509–11 (1998).
[116] J. Phillips, K. Kamath, X. Zhou, N. Chervela, and P. Bhattacharya. “Intersubband absorption
and photoluminescence in Si-doped self-organized InAs/Ga(Al)As quantum dots”. J. Vac. Sci.
Technol. B, 16(3), 1343–6 (1998).
[117] O. Qasaimeh, K. Kamath, P. Bhattacharya, and J. Phillips. “Linear and quadratic electro-optic
coefficients of self-organized In0.4Ga0.6As/GaAs quantum dots”. Applied Physics Letters,
72(11), 1275–7 (1998).
[118] K. Kamath, P. Bhattacharya, and J. Phillips. “Room temperature luminescence from self-
organized InxGa1-xAs/GaAs (0.35<x<0.45) quantum dots with high size uniformity”. Journal
of Crystal Growth, 175, 175–1762 (1997).
[119] K. Kamath, J. Phillips, H. Jiang, J. Singh, and P. Bhattacharya. “Small-signal modulation
and differential gain of single-mode self-organized In0.4Ga0.6As/GaAs quantum dot lasers”.
Applied Physics Letters, 70(22), 2952–3 (1997).
[120] J. Phillips, K. Kamath, X. Zhou, N. Chervela, and P. Bhattacharya. “Photoluminescence
and far-infrared absorption in Si-doped self-organized InAs quantum dots”. Applied Physics
Letters, 71(15), 2079–81 (1997).
[121] P. F. Baude, M. A. Haase, G. M. Haugen, K. K. Law, T. J. Miller, K. Smekalin, J. Phillips, and
P. Bhattacharya. “Conduction band offsets in CdZnSe/ZnSSe single quantum wells measured
by deep level transient spectroscopy”. Applied Physics Letters, 68(25), 3591–3593 (1996).
[122] K. Kamath, P. Bhattacharya, T. Sosnowski, T. Norris, and J. Phillips. “Room-temperature
operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers”. Electronics Letters,
32(15), 1374–5 (1996).
[123] K. Kamath, J. Phillips, J. Singh, and P. Bhattacharya. “Large blueshift in the photolumines-
cence of pseudomorphic InGaAs/GaAs quantum wells grown in patterned (100) GaAs grooves
and ridges with vertical sidewalls”. J. Vac. Sci. Technol. B, 14(3), 2312–14 (1996).
[124] J. Phillips, K. Kamath, J. Singh, and P. Bhattacharya. “Adatom migration effects during
molecular beam epitaxial growth of InGaAs/GaAs quantum wells on patterned substrates with
vertical sidewalls: blue shift in luminescence spectra”. Applied Physics Letters, 68(8), 1120–2
(1996).
14/24

Conference Presentations
[1] M. Barrow, M. Scherr, and J. Phillips. “Leaky Mode Coupling in Asymmetric Subwavelength
Dielectric Gratings”. IEEE Photonics Conference (Orlando, Florida, 2017).
[2] J. Easley, E. Arkun, M. Carmody, and J. Phillips. “Carrier Transport Measurements on
Low-Doped Hg1-xCdxTe”. Electronic Materials Conference (South Bend, Indiana, 2017).
[3] J. Easley, E. Arkun, M. Carmody, and J. Phillips. “Low Temperature Carrier Transport
Measurements on Low Doped Hg1-xCdxTe”. U.S. Workshop on the Physics and Chemistry
of II-VI Materials (Chicago, Illinois, 2017).
[4] H. Masten, J. Phillips, and R. Peterson. “Photo-assisted capacitance-voltage characterization
of interface states in SiO2//beta-Ga2O3 (010) MOS capacitors”. International Workshop on
Gallium Oxide and Related Materials (Parma, Italy, 2017).
[5] E. Moon, D. Blaauw, and J. Phillips. “Photovoltaic Infrared Energy Harvesting for Bio-
Implantable Devices”. Electronic Materials Conference (South Bend, Indiana, 2017).
[6] J. Phillips, M. Barrow, and M. Scherr. “Long-Wave Infrared Filtering in Subwavelength
Dielectric Gratings”. IEEE Photonics Conference (Orlando, Florida, 2017). (INVITED).
[7] M. Ahn, R. Cahyadi, J. Wendorf, M. Versteeg, E. Moon, W. Bowen, B. Torralva, S. Yalisove,
and J. Phillips. “Localized Room-Temperature Structural and Electronic Modifications of SiC
via Ultrafast Laser Irradiation”. Electronic Materials Conference (Newark, Delaware, 2016).
[8] R. Cahyadi, M. Ahn, J. Wendorf, Su, J. Phillips, B. Torralva, and S. Yalisove. “Can Ultrafast
Laser Irradiation Improve Doping of SiC?The Role of Gaseous Environment, Temperature,
Fluence, and Number of Pulses on Damage Threshold and Electrical Conductivity”. Materials
Research Society Fall Meeting (Boston, MA, 2016).
[9] J. Easley, E. Arkun, M. Carmody, and J. Phillips. “Variable Field Hall Effect Measurements
on Low Doped Hg1-xCdxTe”. U.S. Workshop on the Physics and Chemistry of II-VI Materials
(Baltimore, MD, 2016).
[10] I. Lee, W. Lim, A. Teran, J. Phillips, D. Sylvester, and D. Blaauw. “A >78% Efficient Light
Harvester over 100-to-100klux with Reconfigurable PV-Cell Network and MPPT Circuit”.
International Solid State Circuits Conference (San Francisco, CA, 2016).
[11] E. Moon, A. Teran, I. Lee, D. Blaauw, and J. Phillips. “Low-flux Photovoltaic Harvesting
for mm-scale Wireless Sensor Systems”. Electronic Materials Conference (Newark, Delaware,
2016).
[12] M. Scherr, M. Barrow, and J. Phillips. “Narrowband Infrared Transmission Filters via Asym-
metric Subwavelength Dielectric Gratings”. IEEE Photonics Conference (Waikoloa, HI, 2016).
[13] M. Dejarld, A. Teran, S. Beck, J. Phillips, and J. Millunchick. “Low Temperature III-V
Nanowire Growth on Metal and Oxide Substrates”. Electronic Materials Conference (Colum-
bus, OH, 2015).
[14] E. Moon and J. Phillips. “Silicon Photovoltaics for Infrared Energy Harvising in mm-Scale
Systems”. Electronic Materials Conference (Columbus, OH, 2015).
[15] J. Occena, R. Field, A. Teran, T. Jen, C. Kurdak, J. Phillips, and R. S. Goldman. “Electrical
Characterization of GaAsN and GaAsBi Single-Quantum-Well Diodes”. APS March Meeting
(San Antonio, TX, 2015).
[16] A. Teran, J. Wong, W. Lim, G. Kim, Y. Lee, D. Blaauw, and J. Phillips. “AlGaAs Pho-
tovoltaics for Indoor Energy Harvesting”. Electronic Materials Conference (Columbus, OH,
2015).
[17] C. Chen and J. Phillips. “Optical and Structural Properties of ZnSeTeO”. Electronic Materials
Conference (Santa Barbara, CA, 2014).
15/24

[18] C. Chen, A. Teran, and J. Phillips. “Dilute II-VI-O Alloys: Band Anti-Crossing Behavior
and Application to Energy Conversion Devices”. International Workshop on ZnO and Related
Materials (Niagara Falls, Canada, 2014).
[19] J. Foley, S. Young, and J. Phillips. “Transmission Filters Based on Suspended Silicon High
Index-contrast Gratings”. SPIE Photonics West (San Francisco, CA, 2014).
[20] J. Phillips. “Intermediate Band Solar Energy Conversion in ZnTeO and Type-II GaSb/GaAs
Quantum Dots”. Next Generation Solar Photovoltaics Canada (Montreal, Canada, 2014).
(INVITED).
[21] E. Plis, M. N. Kutty, S. Myers, S. Krishna, C. Chen, and J. D. Phillips. “Passivation of long-
wave infrared InAs/GaSb superlattice detectors with epitaxially grown ZnTe”. Proc. SPIE
9070, Infrared Technology and Applications XL (Baltimore, Maryland, 2014).
[22] A. Teran, M. Dejarld, J. Hwang, W. Lim, J. Wong, D. Blaauw, Y. Lee, J. Millunchick, and
J. Phillips. “Indoor Photovoltaic Energy Harvesting for mm-Scale Systems”. Device Research
Conference (Santa Barbara, CA, 2014). (INVITED).
[23] A. Teran, M. Dejarld, W. Lim, Y. Lee, D. Blaauw, J. Millunchick, and J. Phillips. “Energy
Harvesting with III-V Photovolatics for Miniature Systems”. Electronic Materials Conference
(Santa Barbara, CA, 2014).
[24] C. Chen, S. Kim, X. Pan, and J. Phillips. “ZnTeO Epitaxial Layers on GaSb with Outstanding
Structural Properties”. Electronic Materials Conference (South Bend, Indiana, 2013).
[25] C. Chen, A. Teran, E. Antolin, I. Ramiro, E. Lopez, E. Hernandez, I. Artacho, C. Tablero,
A. Marti, A. Luque, and J. Phillips. “Intermediate Band Solar Energy Conversion in ZnTeO”.
39th IEEE Photovoltaic Specialists Conference (Tampa, FL, 2013).
[26] J. Foley and J. Phillips. “Long-Wavelength Infrared Filters Based on Suspended-Silicon High-
Index Contrast Gratings”. Electronic Materials Conference (South Bend, Indiana, 2013).
[27] J. Foley and J. Phillips. “Suspended Si/Air High Contrast Subwavelength Gratings for Long-
Wavelength Infrared Reflectors”. SPIE Photonics West (San Francisco, California, 2013).
[28] J. Hwang, A. J. Martin, K. Lee, S. Forrest, J. Millunchick, and J. Phillips. “Preserving Voltage
and Long Wavelength Photoresponse in GaSb/GaAs Quantum Dot Solar Cells”. 39th IEEE
Photovoltaic Specialists Conference (Tampa, FL, 2013).
[29] A. Teran, C. Chen, and J. Phillips. “Heterojunction n-ZnSe/p-ZnTe Solar Cells”. Electronic
Materials Conference (South Bend, Indiana, 2013).
[30] L. Zhou, C. Ling, D. Banerjee, H. Jia, C. Chen, and J. Phillips. “Towards the Understanding of
Oxygen Placement in ZnTe:O Alloys”. Electronic Materials Conference (South Bend, Indiana,
2013).
[31] E. Antolin, I. Ramiro, E. Lopez, E. Hernandez, I. Artacho, C. Tablero, A. Marti, A. Luque,
C. Chen, J. Foley, and J. D. Phillips. “Intermediate band to conduction band optical absorption
in ZnTeO”. 38th IEEE Photovoltaic Specialists Conference (Austin, Texas, 2012). (INVITED).
[32] C. Chen, J. Foley, and J. Phillips. “Growth and optoelectronic properties of ZnTe with dilute
nitrogen”. Electronic Materials Conference (Pennsylvania State University, 2012).
[33] C. Chen, S. Kim, X. Pan, and J. Phillips. “Dilute oxygen incorporation in ZnTe by plasma-
assisted molecular beam epitaxy”. North American Conference on Molecular Beam Epitaxy
(Stone Mountain Park, Georgia, 2012).
[34] J. M. Foley, J. D. Phillips, A. Itsuno, T. Das, and S. Velicu. “High index-contrast subwave-
length gratings in the long-wavelength infrared”. Electronic Materials Conference (Pennsyl-
vania State University, 2012).
[35] J. Hwang, A. J. Martin, E. Antolin, J. M. Millunchick, and J. Phillips. “Intermediate band
solar energy conversion in quantum dots with type-II band alignment”. European Materials
Research Society Spring Meeting (Strasbourg, France, 2012).
16/24

[36] J. Hwang, A. J. Martin, A. Teran, and J. Millunchick. “Electronic and optical characteristics
of type-II GaSb/GaAs quantum dots for intermediate band solar energy conversion”. Materials
Research Society Fall Meeting (Boston, Massachusetts, 2012).
[37] A. M. Itsuno, J. D. Phillips, and S. Velicu. “Unipolar Barrier-Integrated HgCdTe Infrared
Detectors”. Device Research Conference (Penn State University, 2012).
[38] A. Lin and J. Phillips. “Decoupling spectral overlap of intermediate band solar cells using
low-high state filling”. 38th IEEE Photovoltaic Specialists Conference (Austin, Texas, 2012).
[39] A. J. Martin, J. Hwang, T. Saucer, G. V. Rodriguez, E. Marquis, V. Sih, J. D. Phillips,
and J. Millunchick. “Analysis of the three-dimensional structure and optical and electronic
properties of type-II GaSb/GaAs quantum dots”. International Conference on the Physics of
Semiconductors (Zurich, Switzerland, 2012).
[40] J. Phillips, C. Chen, J. Hwang, A. Teran, V. Stoica, and R. Clarke. “ZnTeO Highly-
Mismatched Alloys”. Materials Research Society Fall Meeting (Boston, Massachusetts, 2012).
(INVITED).
[41] J. Phillips, C. Chen, W. Wang, V. Stoica, R. Clarke, E. Antolin, E. Lopez, I. Ramiro, E. Her-
nandez, I. Artacho, A. Marti, and A. Luque. “Intermediate band solar energy conversion in
ZnTe:O”. European Materials Research Society Spring Meeting (Strasbourg, France, 2012).
(INVITED).
[42] J. Siddiqui, J. Phillips, K. Leedy, and B. Bayraktaroglu. “Illumination Induced Charge Trans-
port in ZnO Thin Film Transistors”. Materials Research Society Fall Meeting (Boston,
Massachusetts, 2012).
[43] J. J. Siddiqui, J. D. Phillips, K. Leedy, and B. Bayraktaroglu. “Illumination Instability Analysis
of ZnO Thin Film Transistors with HfO2 Gate Dielectrics”. Device Research Conference (Penn
State University, 2012).
[44] S. A. Sis, V. Lee, J. D. Phillips, and A. Mortazawi. “A DC voltage dependent switchable
acoustically coupled BAW filter based on BST-on-silicon composite structure”. 2012 IEEE
MTT-S International Microwave Symposium, IMS 2012, June 17, 2012 - June 22, 2012, IEEE
MTT-S International Microwave Symposium Digest (Montreal, QC, Canada, 2012).
[45] S. A. Sis, V. Lee, J. D. Phillips, and A. Mortazawi. “Intrinsically switchable thin film
ferroelectric resonators”. 2012 IEEE MTT-S International Microwave Symposium, IMS 2012,
June 17, 2012 - June 22, 2012, IEEE MTT-S International Microwave Symposium Digest
(Montreal, QC, Canada, 2012).
[46] A. Bayraktaroglu, M. Zhang, P. Bhattacharya, and J. Phillips. “Piezoresponse Force Mi-
croscopy of InGaN/GaN Quantum Dots”. Electronic Materials Conference (Santa Barbara,
CA, 2011).
[47] C. Chen, B. Juang, J. Hwang, S. Kim, X. Pan, and J. Phillips. “Type-II ZnTe/ZnSe Quan-
tum Dots for Intermediate Band Solar Energy Conversion”. AVS 58th Annual International
Symposium and Exhibition (Nashville, Tennessee, 2011).
[48] J. Hwang, A. J. Martin, J. Millunchick, and J. D. Phillips. “Admittance Spectroscopy of
Hole States in GaSb/GaAs Quantum Dots with Type-II Band Alignment”. Materials Research
Society Fall Meeting (Boston, Massachusetts, 2011).
[49] A. Itsuno, J. D. Phillips, and S. Velicu. “Experimental Progress on HgCdTe LWIR Unipolar
nBn Device”. 15th International Conference on II-VI Compounds (Mayan Riviera, Mexico,
2011).
[50] A. Itsuno, J. D. Phillips, and S. Velicu. “MBE Grown HgCdTe MWIR and LWIR nBn Devices”.
U.S. Workshop on the Physics and Chemistry of II-VI Materials (Chicago, Illinois, 2011).
[51] B. Juang, W. Wang, and J. Phillips. “Photoluminescence and thermal carrier activation in
type-II ZnTe/ZnSe quantum dots”. Electronic Materials Conference (Santa Barbara, Califor-
nia, 2011).
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[52] Y. Khan, Y. Zhang, M. Amin, T. K. Ng, J. Phillips, H. Bagci, and B. Ooi. “ZnO Nanorods
for Simultaneous Light Trapping and Transparent Electrode Application in Solar Cells”. 2011
IEEE Photonics Society Annual Meeting (Arlington, Virginia, 2011).
[53] M. N. Kutty, E. Plis, S. Smolev, N. Gautam, M. Naydenkov, S. Myers, R. Dawson, W. Wang,
J. Phillips, and S. Krishna. “Improved Performance of Long-Wave Infrared InAs/GaSb
Strained Layer Superlattices Detectors by Novel ZnTe Passivation”. Electronic Materials
Conference (Santa Barbara, CA, 2011).
[54] A. J. Martin, T. Saucer, J. Lee, J. Hwang, S. Kim, X. Pan, J. Phillips, V. Sih, and J. Mil-
lunchick. “Multi-layer GaSb/GaAs Quantum Dot Structures for Photovoltaics”. Materials
Research Society Fall Meeting (Boston, Massachusetts, 2011).
[55] J. Siddiqui, J. Phillips, K. Leedy, and B. Bayraktaroglu. “Bias Temperature Stress Analysis of
ZnO Thin Film Transistors with HfO2 Gate Dielectrics”. Device Research Conference (Santa
Barbara, CA, 2011).
[56] J. Siddiqui, J. Phillips, K. Leedy, and B. Bayraktaroglu. “Bias-Temperature-Stress Study
of Oxide Thin Film Transistor Device Stability”. Materials Research Society Fall Meeting
(Boston, Massachusetts, 2011).
[57] J. Siddiqui, J. Phillips, K. Leedy, and B. Bayraktaroglu. “Interface charge in ZnO/HfO2
heterostructures”. Electronic Materials Conference (Santa Barbara, CA, 2011).
[58] A. Itsuno, T. Das, J. Phillips, and S. Velicu. “Beyond the HgCdTe P-N Junction: Alternative
Bandgap-Engineered Detector Structures”. U.S. Workshop on the Physics and Chemistry of
II-VI Materials (New Orleans, Louisiana, 2010).
[59] J. Siddiqui, D. Nguyen, J. Phillips, K. Leedy, and B. Bayraktaroglu. “Study of CV and
Admittance Characteristics of ALD High-K dielectric ZnO Capacitors”. Electronic Materials
Conference (South Bend, Indiana, 2010).
[60] S. Velicu, C. H. Grein, P. Y. Emelie, A. Itsuno, J. D. Phillips, and P. Wijewarnasuriya. “Non-
cryogenic operation of HgCdTe infrared detectors”. Quantum Sensing and Nanophotonic
Devices VII (San Francisco, California, 2010).
[61] W. Wang and J. Phillips. “ZnO/ZnSe/ZnTe Heterojunctions for ZnTe:O Solar Cells”. U.S.
Workshop on the Physics and Chemistry of II-VI Materials (New Orleans, Louisiana, 2010).
[62] W. Wang and J. Phillips. “ZnO/ZnTeO/ZnTe Heterojunctions for Intermediate State Solar
Cells”. Electronic Materials Conference (South Bend, Indiana, 2010).
[63] W. Wang and J. D. Phillips. “Intermediate Band Solar Energy Conversion in ZnTe:O and
ZnTe/ZnSe”. Photovoltaic Materials and Manufacturing Issues (Denver, CO, 2010).
[64] W. Bowen, W. Wang, and J. Phillips. “Complementary Thin Film Electronics Based on
ZnO/ZnTe”. Device Research Conference (University Park, PA, 2009).
[65] E. Cagin and J. Phillips. “ZnO/LiNbO3 Heterojunctions: A Candidate System for Multifunc-
tional Oxides”. AVS Annual Symposium (San Jose, CA, 2009).
[66] A. Itsuno, P. Emelie, J. Phillips, S. Velicu, C. H. Grein, and P. Wijewarnasuriya. “Arsenic
Diffusion Study in HgCdTe for Low P-Type Doping in Auger-Suppressed Photodiodes”. U.S.
Workshop on the Physics and Chemistry of II-VI Materials (Chicago, IL, 2009).
[67] A. Lin, W. Wang, and J. Phillips. “Material and Device Requirements for Intermediate-Band
Solar Cells”. Electronic Materials Conference (University Park, PA, 2009).
[68] J. Phillips. “Wide bandgap II-VI thin films for display electronics and solar cells”. AVS Spring
Symposium, Michigan Chapter (Lansing, Michigan, 2009). (INVITED).
[69] W. Wang, A. Lin, J. Phillips, and W. Metzger. “Carrier Generation and Recombination
Processes in ZnTeO for Intermediate Band Solar Cells”. AVS Annual Symposium (San Jose,
CA, 2009).
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[70] W. Wang, A. Lin, J. Phillips, and W. Metzger. “Carrier Generation and Recombination
Processes in ZnTeO for Intermediate Band Solar Cells”. U.S. Workshop on the Physics and
Chemistry of II-VI Materials (Chicago, IL, 2009).
[71] X. Zhu, V. Lee, J. Phillips, and A. Mortazawi. “Switchable contour mode acoustic wave res-
onators based on barium titanate thin films”. International Microwave Symposium, Microwave
Theory and Techniques Society (Boston, MA, 2009).
[72] W. Bowen, E. Cagin, P. Emelie, and J. Phillips. “Current Saturation Characteristics of ZnO
Thin-Film Transistors”. U.S. Workshop on the Physics and Chemistry of II-VI Materials (Las
Vegas, Nevada, 2008).
[73] W. Bowen, E. Cagin, P. Emelie, and J. Phillips. “Current Saturation Characteristics of
ZnO Thin-Film Transistors”. Fifth International Workshop on ZnO and Related Materials
(Ypsilanti, Michigan, 2008).
[74] W. Bowen, E. Cagin, and J. Phillips. “ZnO Thin-Film Transistors for Transparent Displays”.
Society for Information Display Vehicles and Photons (Dearborn, Michigan, 2008).
[75] W. Bowen, W. Wang, E. Cagin, and J. Phillips. “Zinc Oxide Thin Film Channels for Thin
Film Transistors with Large On/Off Current Ratio”. Electronic Materials Conference (Santa
Barbara, California, 2008).
[76] P. Emelie, J. Phillips, S. Velicu, C. H. Grein, and P. Wijewarnasuriya. “Arsenic Diffusion
Study in HgCdTe for Low P-Type Doping in Auger-Suppressed Photodiodes”. U.S. Workshop
on the Physics and Chemistry of II-VI Materials (Las Vegas, Nevada, 2008).
[77] J. Fu, X. A. Zhu, J. D. Phillips, and A. Mortazawi. “A Ferroelectric-Based Impedance Tuner
for Adaptive Matching Applications”. IEEE MTT-S International Microwave Symposium
(2008).
[78] J. Phillips. “ZnTe/ZnO II-VI Solar Cells”. International Optoelectronics Symposium (Chicago,
IL, 2008). (INVITED).
[79] S. Velicu, C. H. Grein, M. Carmody, P. Dreiske, D. Rafol, P. Emelie, J. Phillips, P. Wijewar-
nasuriya, N. Dhar, and A. D’Souza. “HgCdTe Detectors Under Non-Equilibrium Conditions
for Operation Under Non-Cryogenic Temperatures”. Quantum Structures for Non-Cryogenic
Infrared Imaging, NATO SET-137 (Las Vegas, NV, 2008).
[80] W. Wang, S. Lin, and J. Phillips. “Intermediate-Band Solar Cells Based on ZnTeO”. U.S.
Workshop on the Physics and Chemistry of II-VI Materials (2008).
[81] W. Wang, S. Lin, and J. Phillips. “Optical Absorption Properties of ZnTe:O and Application
to Solar Cells”. Electronic Materials Conference (Santa Barbara, California, 2008).
[82] W. Bowen and J. Phillips. “Growth and Optical Characterization of ZnO/MgZnO Quantum
Wells”. U.S. Workshop on the Physics and Chemistry of II-VI Materials (Baltimore, Maryland,
2007).
[83] W. Bowen, W. Wang, E. Cagin, and J. Phillips. “Optical and Structural Characterization
of ZnO/MgxZn1-xO Quantum Wells Synthesized by Pulsed Laser Deposition”. Electronic
Materials Conference (South Bend, Indiana, 2007).
[84] P. Emelie, S. Velicu, C. H. Grein, J. Phillips, P. Wijewarnasuriya, and N. Dhar. “Modeling of
LWIR HgCdTe Infrared Detectors Under Non-Equilibrium Operation”. U.S. Workshop on the
Physics and Chemistry of II-VI Materials (Baltimore, Maryland, 2007).
[85] J. Phillips. “ZnO: Candidate Material for Ultra-Low Loss Optical Waveguides?” DARPA
Ultra-Low Loss Waveguide Workshop (Arlington, VA, 2007). (INVITED).
[86] W. Wang, W. Bowen, S. Lin, S. Spanninga, and J. Phillips. “Pulsed laser deposition of
ZnOxTe1-x thin films and application to p+-Si/ZnOTe/n-ZnO heterojunction diodes”. Ma-
terials Research Society Fall Meeting (Boston, Massachusetts, 2007).
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[87] W. Wang, W. Bowen, and J. Phillips. “Mixed anion ZnOTe thin films by pulsed laser
deposition”. American Vacuum Society 54th International Symposium (Seattle, Washington,
2007).
[88] X. Zhu, J. D. Phillips, and A. Mortazawi. “A DC Voltage Dependent Switchable Thin Film
Bulk Wave Acoustic Resonator Using Ferroelectric Thin Film”. IEEE MTT-S International
Microwave Symposium (Honolulu, Hawaii, 2007).
[89] E. Cagin, D. Chen, J. Siddiqui, and J. D. Phillips. “Metal-Ferroelectric-Semiconductor Ca-
pacitors Based on PZT/ZnO Heterostructures”. Electronic Materials Conference (University
Park, PA, 2006).
[90] E. Cagin, J. Siddiqui, W. Wang, and J. Phillips. “ZnO/Ferroelectric Thin Film Heterostruc-
ture Capacitors and Thin Film Transistors”. 4th International Workshop on ZnO (Giessen,
Germany, 2006).
[91] E. Cagin, W. Wang, J. Yang, and J. Phillips. “Epitaxial Growth of m-Plane (10-10) Wurtzite
ZnO on Cubic (001) MgO Substrates”. 4th International Workshop on ZnO (Giessen, Ger-
many, 2006).
[92] E. Cagin, J. Yang, J. D. Phillips, and P. K. Bhattacharya. “Growth of ZnO on Cubic Substrates
by Molecular Beam Epitaxy”. Electronic Materials Conference (University Park, PA, 2006).
[93] P. Y. Emelie, E. Cagin, J. Siddiqui, J. D. Phillips, C. Fulk, J. Garland, and S. Sivananthan.
“Electrical Characteristics of PEDOT:PSS Organic Contacts to HgCdTe”. U.S. Workshop on
the Physics and Chemistry of II-VI Materials (Newport, CA, 2006).
[94] P. Y. Emelie, J. D. Phillips, S. Velicu, and C. H. Grein. “Modeling and Design Considerations
of HgCdTe Infrared Detectors Under Non-Equilibrium Operation”. U.S. Workshop on the
Physics and Chemistry of II-VI Materials (Newport, CA, 2006).
[95] J. S. Fu, X. Zhu, D. Chen, J. D. Phillips, and A. Mortazawi. “A Linearity Improvement
Technique for Thin-Film Barium Strontium Titanate Capacitors”. IEEE MTT-S International
Microwave Symposium (San Francisco, California, 2006).
[96] J. Phillips. “Semiconducting and ferroelectric oxide materials for optoelectronics”. Nano-
Optoelectronic Workshop and Summer School of Advances in Photonics (Berkeley, CA, 2006).
(INVITED).
[97] W. Wang, E. Cagin, W. Bowen, and J. Phillips. “In-Situ Arsenic Doping of ZnO Grown on
GaN/Sapphire and ZnO Substrates by Molecular Beam Epitaxy”. Materials Research Society
Fall Meeting (Boston, MA, 2006).
[98] E. Cagin, J. Siddiqui, D. Chen, S. Chua, V. Alexander, and J. Phillips. “Electrical properties
of ferroelectric/ZnO heterojunctions”. Materials Research Society Fall Meeting (Boston,
Massachusetts, 2005).
[99] D. Chen and J. Phillips. “Electric field dependence of piezoelectric coefficient in ferroelectric
thin films”. International Conference on Electroceramics (Seoul, Korea, 2005).
[100] D. Chen and J. Phillips. “Hysteretic electro-optic response in ferroelectric thin films”. Proc.
SPIE (2005).
[101] P. Emelie, K. Moazzami, J. Phillips, B. Buller, and U. Venkateswaran. “Infrared Absorption
Characteristics Of Bulk ZnO And Relationship To Electronic Properties”. 47th Electronic
Materials Conference (Santa Barbara, California, 2005).
[102] K. Moazzami, T. Murphy, and J. Phillips. “Photoconductive Behavior of ZnO for Below
Bandedge Excitation”. 47th Electronic Materials Conference (Santa Barbara, California,
2005).
[103] T. Murphy and J. Phillips. “Preparing for an Academic Career Through Team Teaching as a
Graduate Student”. 2005 ASEE Annual Conference and Exposition (Portland, Oregon, 2005).
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[104] J. Phillips. “Epitaxial Growth and Optoelectronic Properties of ZnO”. Nano-Optoelectronics
Workshop (University of California, Berkeley, 2005).
[105] J. Phillips and T. Murphy. “Mentoring Graduate Students In Engineering Education Through
Team Teaching”. 2005 ASEE Annual Conference and Exposition (Portland, Oregon, 2005).
[106] J. Siddiqui, E. Cagin, P. Shea, J. Phillips, and J. Kanicki. “Incorporation of perovskite oxides
into gate insulator of zinc oxide TFTs”. Materials Research Society Fall Meeting (Boston,
Massachusetts, 2005).
[107] X. Zhu, D. Chen, Z. Jin, J. D. Phillips, and A. Mortazawi. “Characterization of Thin Film
BST Tunable Capacitors Using A Simple Two Port Measurement Technique”. IEEE MTT-S
International Microwave Symposium (2005).
[108] D. Beloin-St. Pierre, B. Buller, U. Venkateswaran, D. Chen, T. E. Murphy, and J. D. Phillips.
“Temperature and Pressure Dependence of the Raman Modes in Barium Titanate Films”.
Annual APS March Meeting 2004 (Montreal, Quebec, Canada, 2004).
[109] M. Cheung, A. N. Cartwright, T. E. Murphy, J. D. Phillips, and W. E. Bowen. “Time-resolved
spectroscopy of ZnO thin films grown by Pulsed Laser Deposition”. 2004 Materials Research
Society Fall Meeting (Boston, Massachussetts, 2004).
[110] K. Moazzami, T. E. Murphy, and J. D. Phillips. “Transient Properties Of ZnO/Al2O3
Photoconductors”. 2004 Materials Research Society Fall Meeting (Boston, Massachussetts,
2004).
[111] K. Moazzami, J. D. Phillips, D. Lee, S. Krishnamurthy, G. Benoit, and Y. Fink. “Detailed
Study Of Above Bandgap Optical Absorption In MBE HgCdTe”. U.S. Workshop on the
Physics and Chemistry of II-VI Materials (Chicago, Illinois, 2004).
[112] T. Murphy, K. Moazzami, J. Phillips, M. Cheung, and A. N. Cartwright. “Time-Resolved
Optoelectronic Properties Of ZnO Epilayers”. 3rd International Conference on ZnO and
Related Materials (Sendai, Japan, 2004).
[113] T. E. Murphy, W. E. Bowen, J. O. Blaszczak, K. Moazzami, and J. D. Phillips. “Ohmic
and blocking contacts to n-type ZnO (0001) epitaxial and bulk material”. 46th Electronic
Materials Conference (South Bend, Indiana, 2004).
[114] T. E. Murphy, D. Chen, and J. D. Phillips. “Growth and Electronic Properties of ZnO
Epilayers By Plasma-Assisted Molecular Beam Epitaxy”. U.S. Workshop on the Physics and
Chemistry of II-VI Materials (Chicago, Illinois, 2004).
[115] T. E. Murphy, K. Moazzami, D. Chen, and J. D. Phillips. “Electronic Properties Of ZnO
Epilayers Grown On C-Plane Sapphire By Plasma-Assisted Molecular Beam Epitaxy”. North
American Conference on Molecular Beam Epitaxy (Banff, Alberta, Canada, 2004).
[116] J. D. Phillips. “Optical Properties Of HgCdTe And Relationship To Infrared Detector Appli-
cations”. The 4th International Symposium on Quantum Functional Systems (Seoul, Korea,
2004). (INVITED).
[117] S. Chakrabarti, K. Moazzami, S. Fathpour, P. K. Bhattacharya, J. D. Phillips, Y. Lei, and
N. Browning. “Pulsed Laser Annealing of Self-Organized InAs/GaAs Quantum Dots”. 45th
Electronic Materials Conference (Salt Lake City, Utah, 2003).
[118] D. Chen, T. E. Murphy, and J. D. Phillips. “Deposition Of BaTiO3 Thin Films And MgO
Buffer Layers On Patterned GaAs Substrates for Integrated Optics Applications”. 2003 Ma-
terials Research Society Fall Meeting (Boston, MA, 2003).
[119] K. Moazzami, J. Phillips, D. Lee, D. Edwall, M. Carmody, E. Piquette, M. Zandian, and
J. Arias. “Optical Absorption Model for MBE HgCdTe and Application to Infrared Detector
Photo Response”. U. S. Workshop On The Physics And Chemistry Of II-VI Materials (New
Orleans, Louisiana, 2003).
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[120] K. Moazzami, J. Phillips, D. Lee, D. Edwall, M. Carmody, E. Piquette, M. Zandian, and
J. Arias. “Optical Absorption Studies Of HgCdTe Epitaxial Layers For Improved Infrared
Detector Modeling”. 11th International Conference on II-VI Compounds (Niagara Falls, New
York, 2003).
[121] T. E. Murphy, D. Chen, and J. D. Phillips. “Integration of BaTiO3 Ferroelectric Thin Films
With GaAs for Functional Devices”. IEEE 15th Biennial University/Government/Industry
Microelectronics Symposium (Boise, Idaho, 2003).
[122] T. E. Murphy, D. Chen, and J. D. Phillips. “Integration of BaTiO3 Ferroelectric Thin Films
with GaAs Using MgO and AlxOy Buffer Layers”. 45th Electronic Materials Conference (Salt
Lake City, Utah, 2003).
[123] M. Carmody, D. Lee, M. Zandian, J. Arias, and J. Phillips. “Threading and Misfit Dislocation
Motion in MBE Grown HgCdTe Epi-layers”. Military Sensing Symposium Specialty Group On
Materials (2002).
[124] M. Carmody, D. Lee, M. Zandian, J. Phillips, and J. Arias. “Misfit Dislocation Formation
And Motion In HgCdTe Cap Layers”. U.S. Workshop On The Physics And Chemistry Of II-VI
Materials (San Diego, CA, 2002).
[125] K. Moazzami, D. Liao, J. Phillips, D. Lee, M. Carmody, M. Zandian, and D. Edwall. “Optical
Absorption Properties Of HgCdTe Epilayers With Uniform Composition”. U.S. Workshop On
The Physics And Chemistry Of II-VI Materials (San Diego, CA, 2002).
[126] J. Phillips. “Evaluation of Performance Limitations in Quantum Dot Infrared Detectors”.
Electronic Materials Conference (Santa Barbara, CA, 2002).
[127] J. Phillips, D. Chen, Z. Zhang, and P. Pronko. “Properties of ferroelectric materials deposited
on semiconductors by ultrafast pulsed laser deposition”. ONR Workshop On Ferroelectric-
Semiconductor Interfaces (Kona, Hawaii, 2002).
[128] D. Edwall, J. Phillips, E. Piquette, M. Zandian, and J. Arias. “HgCdTe MBE At Rockwell”.
Military Sensing Symposia Specialty Group On Infrared Materials (Tysons Corner, Virginia,
2001).
[129] D. Lee, H. Sankur, R. Bailey, W. McLevige, D. Edwall, J. Phillips, J. Chow, G. Hildebrandt,
and W. Tennant. “High-performance VLWIR microlensed FPAs”. Military Sensing Symposia
Specialty Group On Infrared Materials (Tysons Corner, Virginia, 2001).
[130] J. Phillips, D. Edwall, and D. Lee. “Control of VLWIR detector cutoff wavelength”. U.S.
Workshop On The Physics And Chemistry Of II-VI Materials (Orlando, Florida, USA, 2001).
[131] J. Phillips, D. Edwall, D. Lee, and J. Arias. “Control of composition and detector cutoff
for long-wavelength HgCdTe grown by molecular beam epitaxy”. Military Sensing Symposia
Specialty Group On Infrared Materials (Tysons Corner, Virginia, 2001).
[132] P. Wijewarnasuriya, M. Zandian, J. Phillips, D. Edwall, R. DeWames, G. Hildebrandt, J. Bajaj,
J. Arias, A. D’Souza, and F. Moore. “Advances in large area HgCdTe photovoltaic detectors
for remote sensing applications”. SPIE International Symposium on Optical Science and
Technology (San Diego, California, 2001).
[133] P. Wijewarnasuriya, M. Zandian, J. Phillips, D. Edwall, G. Hildebrandt, J. Bajaj, J. Arias,
A. D’Souza, and F. Moore. “Advances in larger area HgCdTe photovoltaic detectors for remote
sensing applications”. U.S. Workshop On The Physics And Chemistry Of II-VI Materials
(Orlando, Florida, 2001).
[134] P. Bhattacharya, S. Krishna, J. Phillips, P. J. McCann, and K. Namjou. “Carrier dynamics
in self-organized quantum dots and their applications to long-wavelength sources and detec-
tors”. XIth International Conference on Molecular Beam Epitaxy (Beijing, China, 2000).
(INVITED).
22/24

[135] P. Bhattacharya, S. Krishna, J. D. Phillips, D. Klotzkin, and P. J. McCann. “Quantum
dot carrier dynamics and far-infrared devices”. Photonics Taiwan (Taipei, Taiwan, 2000).
(INVITED).
[136] P. Bhattacharya, S. Krishna, D. Zhu, J. Phillips, D. Klotzkin, O. Qasaimeh, W. Zhou,
J. Singh, P. J. McCann, and K. Namjou. “Optoelectronic device applications of self-organized
In(Ga,Al)As/Ga(Al)As quantum dots”. Materials Research Society Spring Meeting (2000).
(INVITED).
[137] D. Edwall, J. Phillips, D. Lee, and J. Arias. “Composition control of long wavelength
MBE HgCdTe using in situ spectroscopic ellipsometry”. U.S. Workshop on the Physics
and Chemistry of II-VI Materials (Albuquerque, New Mexico, 2000).
[138] J. Phillips, D. Edwall, D. Lee, and J. Arias. “Growth of HgCdTe for long-wavelength infrared
detectors using automated control from spectroscopic ellipsometry measurements”. 19th
North American Conference On Molecular Beam Epitaxy (Tempe, Arizona, 2000).
[139] P. Bhattacharya, J. Phillips, S. Krishna, O. Qasaimeh, and W. Zhou. “Carrier dynamics and
ultrafast photonic device application of self-organized quantum dots”. Femtosecond Science
and Technology Conference (Chiba, Japan, 1999). (INVITED).
[140] R. M. Biefeld, S. R. Kurtz, and J. Phillips. “Exploring New Active Regions for Type I InAsSb
Strained-Layer Lasers”. 9th Biennial Workshop On Organometallic Vapor Phase Epitaxy
(Ponte Vedra Beach, Florida, 1999).
[141] R. M. Biefeld, J. Phillips, and S. R. Kurtz. “InAsSb/InPSb Strained-Layer Superlattice
Growth Using Metal-Organic Chemical Vapor Deposition”. 11th American Conference On
Crystal Growth and Epitaxy (Tucson, Arizona, 1999).
[142] R. M. Biefeld and J. D. Phillips. “Growth of InSb on GaAs substrates using InAlSb buffers
for magnetic field sensor applications”. Materials Research Society Fall Meeting, edited by
M. O. Manasreh, B. J. H. Stadler, I. Ferguson, and Y. H. Zhang (Boston, Massachussetts,
1999). (INVITED).
[143] R. M. Biefeld, J. D. Phillips, and S. R. Kurtz. “The growth of InAsSb/InAs/InPSb/InAs mid-
infrared emitters by metal-organic chemical vapor deposition”. Materials Research Society
Fall Meeting, edited by M. O. Manasreh, B. J. H. Stadler, I. Ferguson, and Y. H. Zhang
(Boston, Massachussetts, 1999).
[144] S. Krishna, J. Phillips, P. Bhattacharya, and S. Kennerly. “Self-organized quantum dot
intersubband detectors: Carrier dynamics and performance characteristics”. Gordon Research
Conference on Thin films and crystal growth mechanisms (Plymouth, New Hampshire, 1999).
(INVITED).
[145] J. Phillips, D. Klotzkin, O. Qasaimeh, W. Zhou, and P. Bhattacharya. “High-speed modula-
tion of quantum-dot lasers”. IEEE/LEOS Summer Topical Meeting (San Diego, California,
1999). (INVITED).
[146] P. Bhattacharya, K. Kamath, J. Phillips, and D. Klotzkin. “Self-organized growth of
In(Ga)As/GaAs quantum dots and their device applications”. International Electron Devices
and Materials Symposium (Taiwan, 1998).
[147] P. Bhattacharya, K. Kamath, J. Phillips, and D. Klotzkin. “Self-organized growth of
In(Ga)As/GaAs quantum dots and their opto-electronic device applications”. International
Union of Materials Research Societies Conference (Bangalore, India, 1998).
[148] P. K. Bhattacharya, Z. Xiangkun, K. Kamath, D. Klotzkin, J. Phillips, C. Caneau, and R. Bhat.
“High-speed quantum well and quantum dot lasers”. Proceedings of the SPIE The Interna-
tional Society for Optical Engineering, 3547, 350–60 (1998).
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[149] D. Klotzkin, J. Phillips, H. Jiang, J. Singh, and P. Bhattacharya. “Electron intersubband en-
ergy level spacing in self-organized In0.4Ga0.6As/GaAs quantum dot lasers from temperature-
dependent modulation measurements”. 17th North American Conference on Molecular Beam
Epitaxy (State College, Pennsylvania, 1998).
[150] K. K. Linder, J. Phillips, S. Krishna, Z. Mouffak, and P. Bhattacharya. “Growth and electro-
luminescent properties of self-organized In0.4Ga0.6As/GaAs quantum dots grown on silicon”.
17th North American Conference on Molecular Beam Epitaxy (State College, Pennsylvania,
1998).
[151] K. K. Linder, J. Phillips, S. Krishna, O. Qasaimeh, and P. Bhattacharya. “Growth and prop-
erties of self-organized In/sub 0.4/Ga/sub 0.6/As-GaAs quantum dot light emitting diodes
on silicon substrates”. IEEE LEOS Annual Meeting (Orlando, Florida, 1998).
[152] K. K. Linder, J. Phillips, O. Qasaimeh, and P. Bhattacharya. “In(Ga)As/GaAs self-organized
quantum dot light emitters grown on silicon substrates”. Tenth International Conference on
Molecular Beam Epitaxy (Cannes, France, 1998).
[153] B. Lita, R. S. Goldman, J. Phillips, and P. Bhattacharya. “Nanometer-scale studies of vertical
organization and evolution of stacked self-assembled InAs/GaAs quantum dots”. Materials
Research Society Fall Meeting (Boston, Massachussetts, 1998).
[154] J. Phillips, P. Bhattacharya, and D. Klotzkin. “Self-assembled In(Ga)As/Ga(Al)As quantum
dots: High speed lasers and novel quantum dot detectors and transistors”. Semiconductor
Science And Technology Conference (La Jolla, California, 1998). (INVITED).
[155] J. Phillips, K. Kamath, and P. Bhattacharya. “InAs/GaAs self-organized quantum dot far-
infrared detectors”. Conference On Lasers And Electro-Optics (San Francisco, California,
1998).
[156] J. Phillips, K. Kamath, K. T. Brock, and P. Bhattacharya. “Room temperature self-organized
quantum dot transistors”. Device Research Conference (Charlottesville, Virginia, 1998).
[157] J. D. Phillips, P. K. Bhattacharya, and U. D. Venkateswaran. “Photoluminescence studies on
self-organized InAlAs/AlGaAs quantum dots under pressure”. Eighth International Conference
on High Pressure Semiconductor Physics (Thessaloniki, Greece, 1998).
[158] K. Kamath, H. Jiang, D. Klotzkin, J. Phillips, T. Sosnowski, T. Norris, J. Singh, and P. Bhat-
tacharya. “Strain tensor, electronic spectra and carrier dynamics in In(Ga)As/GaAs self-
assembled quantum dots”. IEEE International Symposium on Compound Semiconductors,
edited by M. Melloch and M. A. Reed (Santa Barbara, California, 1997).
[159] D. Klotzkin, K. Kamath, T. Sosnowksi, J. Phillips, T. Norris, and P. Bhattacharya. “Mod-
ulation properties and the phonon bottleneck in self-organized single and multilayer In/sub
0.4/Ga/sub 0.6/As/GaAs quantum dot room temperature lasers”. IEEE Cornell University
Conference (Ithaca, New York, 1997).
[160] J. Phillips, K. Kamath, X. Zhou, N. Chervela, and P. Bhattacharya. “Intersubband absorption
and photoluminescence in Si-doped self-organized InAs/Ga(Al)As quantum dots”. 16th North
American Conference on Molecular Beam Epitaxy (Ann Arbor, Michigan, 1997).
[161] K. Kamath, J. Phillips, T. Sosnovski, X. Zhang, T. Norris, and P. Bhattacharya. “Room
temperature operation of MBE self-organized InGaAs quantum dot lasers”. IEEE International
Semiconductor Laser Conference (Haifa, Israel, 1996).
[162] J. Phillips, K. Kamath, T. Sosnowski, T. Norris, and P. Bhattacharya. “Room temperature
luminescence and 1 mu m junction laser operation of In/sub x/Ga/sub 1-x/As/GaAs quantum
dot lasers”. IEEE LEOS Annual Meeting (Boston, Massachussets, 1996).
[163] K. Kamath, J. Phillips, J. Singh, and P. Bhattacharya. “Large blueshift in the photolumines-
cence of pseudomorphic InGaAs/GaAs quantum wells grown in patterned (100) GaAs grooves
and ridges with vertical sidewalls”. 15th North American Conference on Molecular Beam
Epitaxy (College Park, Maryland, 1995).
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